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佐々木 拓生; Norman, A. G.*; Romero, M. J.*; Al-Jassim, M. M.*; 高橋 正光; 小島 信晃*; 大下 祥雄*; 山口 真史*
Physica Status Solidi (C), 10(11), p.1640 - 1643, 2013/11
被引用回数：4 パーセンタイル：83.46(Physics, Applied)Defect characterization in compositionally step graded In
Ga
As layers with different thickness of the overshooting (OS) layer was performed using cathodoluminescence (CL) and transmission electron microscopy (TEM). We found that the type and in-plane distribution of defects generated in the top InGaAs layer grown on step graded layers strongly depend on the thickness of the OS layer. In the thin OS layer, a high density of threading dislocations aligned along [110] was observed. In the thick OS layer, significant line defects associating composition variation were dominantly present. These features on defect type and distribution would relate to strain and configuration of the OS layer.
高橋 正光; 神津 美和*; Hu, W.*; 仲田 侑加
no journal, ,
The polytypism of GaAs nanowires was investigated by in situ X-ray diffraction. The growth of nanowries was found to start with the formation of zincblende structure, followed by the growth of the wurtzite structure. Comparison with the simulation based on the thermodynamic model of nucleation shows that the observed transition of the growth mode is due to the increase in supersaturation during nanowire growth.
